FDB016N04AL7 datasheet

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О ДАТАШИТЕ

• Маркировка
  FDB016N04AL7
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FDB016N04AL7 Continuous Drain Current: 160 A Current - Continuous Drain (id) @ 25?° C: 160A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 381 S Gate Charge (qg) @ Vgs: 167nC @ 10V Input Capacitance (ciss) @ Vds: 11600pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-263-7, D??Pak (6 leads + Tab) Power - Max: 283W Power Dissipation: 283 W Rds On (max) @ Id, Vgs: 1.6 mOhm @ 80A, 10V Resistance Drain-source Rds (on): 1.16 mOhms Series: PowerTrench?® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 3V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: 40 V Resistance Drain-Source RDS (on): 1.16 mOhms Forward Transconductance gFS (Max / Min): 381 S Factory Pack Quantity: 800
• Количество страниц
  9 шт.
• Форматы файла
  HTML, PDF

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